Work

Effect of complex formation on diffusion of arsenic in silicon

Year: 1973

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1661873

Authors: Richard B. Fair, Gary R. Weber

Institution: AT&T (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2042488912

FWCI: 5.009

Cites: 19

Cited by: 158

Related to: 10