Year: 2006
Type: article
Abstract: Optical lithography has been an industrial workhorse for many decades. It has reached a wavelength of 193 nm, a Numerical Aperture (NA) of 0.93 but was facing difficulties to advance further until the debut of immersion lithography. This review deals with the limit of dry and immersion lithography systems, their present and future challenges to reach these very limits. A discussion of defects in immersion lithography, the status of immersion lithography, polarized illumination, high-index materials, solid-immersion mask, double exposure and double patterning is included.
Source: Comptes Rendus Physique
Author: Burn J. Lin
Institution: Taiwan Semiconductor Manufacturing Company (Taiwan)
Language: French
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2042489539