Year: 1999
Type: article
Abstract: We measured tunneling conductance of Al–Al oxide–p-Bi2Te3 tunnel junctions. A small increase of the tunneling conductance was observed in the energy gap region. The intensity of the increase of tunneling conductance decreased by annealing the p-Bi2Te3 films. Therefore, it is considered that this increase in tunneling conductance is closely related to energy states caused by defects in p-Bi2Te3 films. For the first time, energy states caused by defects are revealed by tunneling experiments in p-Bi2Te3 films.
Source: physica status solidi (b)
Institutions: Nagoya Institute of Technology, Hokkaido University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2042543599