The Property of Ta2O5 on Chemical Vapor Deposited Ru Film Fabricated using Tris(2,4-octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor
Year: 2001
Type: article
DOI: 10.1143/jjap.40.5201
Institution: SK Group (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2043392101