Work

Abinitioinvestigation of the dislocation structure and activation energy for dislocation motion in silicon carbide

Year: 1995

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.52.4951

Authors: P. K. Sitch, R. Jones, S. Öberg, M. I. Heggie

Institution: University of Exeter

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2043796412

FWCI: 1.854

Cites: 13

Cited by: 47

Related to: 10