Work

Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating

Year: 2015

Type: article

Abstract: We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

Source: ACS Nano

DOI: 10.1021/acsnano.5b00497

Authors: Yu Saito, Yoshihiro Iwasa

Institutions: Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo, The University of Tokyo, RIKEN Center for Emergent Matter Science

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Japan Society for the Promotion of Science, Japan Science and Technology Agency, Strategic International Collaborative Research Program

Award: イオントロニクス学理の構築