Work

Integrated non-SO2 underlayer and improved line-edge-roughness dielectric etch process using 193nm bilayer resist

Year: 2006

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2210086

Authors: Parijat Bhatnagar, Siddhartha Panda, Nikki L. Edleman, Scott D. Allen, Richard Wise, Arpan Mahorowala

Institutions: Cornell University, IBM (United States), IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2044635761

FWCI: 1.349

Cites: 26

Cited by: 7

Related to: 10