Work

Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

Year: 2014
Type: article
Abstract: Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.
Source: Nano Letters
Language: English
Open Access status: hybrid
Estimated APC paid: $4,500
OpenAlex ID: W2044859437
FWCI: 6.404
Cites: 29
Cited by: 163
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