Year: 2013
Type: article
Abstract: Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region, yielding the photogeneration of spin-polarized electrons in the satellite $L$ valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the $L$ to the $\ensuremath{\Gamma}$ valley following an energy relaxation of several hundreds of meV. Combining these high energy photoexcitation experiments with time-resolved photoluminescence spectroscopy of $\ensuremath{\Gamma}$-valley spin-polarized photogenerated electrons allows us to deduce a typical $L$-valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.
Source: Physical Review B
Authors: T. T. Zhang, P. Barate, C. T. Nguyen, A. Balocchi, T. Amand, P. Renucci, H. Carrere, B. Urbaszek, X. Marie
Language: Latvian
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2044866876