Work

Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence

Year: 2004

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1641146

Authors: S. Khatsevich, D. H. Rich, X. Zhang, W. Zhou, P. D. Dapkus

Institutions: Ben-Gurion University of the Negev, University of Southern California

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: University of Southern California, Defense Advanced Research Projects Agency, Agencia Estatal de Investigación

OpenAlex ID: W2044913196

FWCI: 3.697

Cites: 53

Cited by: 41

Related to: 10