Work

TiS3 Transistors with Tailored Morphology and Electrical Properties

Year: 2015

Type: article

Abstract: Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.

Source: Advanced Materials

DOI: 10.1002/adma.201405632

Authors: Joshua O. Island, Mariam Barawi, Robert Biele, Adrián Almazán, José M. Clamagirand, José R. Ares, Carlos Sánchez, Herre S. J. van der Zant, José V. Álvarez, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos‐Gomez

Institutions: Delft University of Technology, Universidad Autónoma de Madrid, University of the Basque Country, Ikerbasque, IMDEA Nanoscience

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: European Commission, Eusko Jaurlaritza, Nederlandse Organisatie voor Wetenschappelijk Onderzoek, Ministerio de Economía y Competitividad, Euskal Herriko Unibertsitatea

Awards: G1874548545, G2534152945, G2677659222, G4146438721, G4207846756, G451536603, Strain engineering of atomically-thin nanomembrane-based electromechanical devices, G6196582043

OpenAlex ID: W2044913783

FWCI: 8.788

Cites: 43

Cited by: 221

Related to: 10