Work

Point defect/dopant diffusion considerations following preamorphization of silicon via Si+ and Ge+ implantation

Year: 1988

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.99292

Authors: A. C. Ajmera, G. A. Rozgonyi, R. B. Fair

Institutions: North Carolina State University, MCNC Research and Development Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2045537317

FWCI: 2.919

Cites: 8

Cited by: 50

Related to: 10