The Study of the Origin of the Anomalously Large Thermoelectric Power of Si/Ge Superlattice Thin Film
Year: 2000
Type: article
Abstract: We present the experimental framework for the origin of the anomalously large thermoelectric power for Si and Au-doped Ge superlattice thin film. The thermoelectric power of the sample still remains anomalously large even though the superlattice structure begins to collapse. An amorphous Ge thin film displays large thermoelectric power. The crystallized samples have almost the same thermoelectric power as that of conventional SiGe bulk samples. The main cause of this anomalously large thermoelectric power of Si/Ge superlattice thin films is amorphous Ge layer.
DOI: 10.1143/jjap.39.1675
Institution: National Defense Academy of Japan
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2045590530
