Work

Raman study of strained Ge1−xSnx alloys

Year: 2011

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3606384

Authors: Hai Lin, Robert Chen, Yijie Huo, Theodore I. Kamins, James S. Harris

Institution: Stanford University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Award: GRADUATE RESEARCH FELLOWSHIP PROGRAM

OpenAlex ID: W2045918948

FWCI: 3.612

Cites: 11

Cited by: 118

Related to: 10