Work

1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Year: 2004

Type: article

Source: Electronics Letters

DOI: 10.1049/el:20046692

Authors: I.R. Sellers, H.Y. Liu, K.M. Groom, D.T. Childs, D. Robbins, T.J. Badcock, M. Hopkinson, D.J. Mowbray, M.S. Skolnick

Institutions: University of Sheffield, Engineering and Physical Sciences Research Council

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2045965900

FWCI: 5.322

Cites: 9

Cited by: 130

Related to: 10