Year: 2002
Type: article
Abstract: Low-temperature electron-spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from ${10}^{14}{\mathrm{cm}}^{\ensuremath{-}3}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{17}{\mathrm{cm}}^{\ensuremath{-}3}.$ A peculiarity related to the metal-to-insulator transition is observed in the dependence of the spin lifetime on doping near ${n}_{D}=2\ifmmode\times\else\texttimes\fi{}{10}^{16}{\mathrm{cm}}^{\ensuremath{-}3}.$ In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction
Language: Russian
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2046284758