Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
Year: 2006
Type: article
Abstract: The purpose of this study is to investigate the effects of electrical stress on the 1/ f noise behavior in n-channel metal–oxide–semiconductor transistors with ultrathin gate oxides. Even under a weak electrical stress, the drain current noise ( S id ) of the device with a 1.4-nm-thick oxide was found to increase abruptly beyond a certain critical gate bias. This deteriorated noise property was proven to be from simultaneous increases in gate current noise ( S ig ) and the correlation between S id and S ig , which were directly related to oxide trap generation and gate/drain current ( I g / I d ) ratio, respectively. Meanwhile, the increase in S id in the device with a 2.3-nm-thick oxide after stress, with a comparable transconductance degradation, was relatively insignificant because of the device's smaller I g / I d ratio, even if the measured S ig was comparable to that of the thinner oxide device. Consequently, the 1/ f noise degradation could be much more significant than the accompanying DC characteristic degradations in the thin gate oxide below 1.5 nm.
DOI: 10.1143/jjap.45.4943
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2046939524