Work

A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET

Year: 2014

Type: article

Source: Journal of Computational Electronics

DOI: 10.1007/s10825-014-0591-y

Authors: N. Lakhdar, F. Djeffal

Institutions: University of Batna 1, University of Eloued

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2047209441

FWCI:

Cites: 12

Cited by: 1

Related to: 10