Work

Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

Year: 1996

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(96)00045-7

Authors: J.B. Casady, R.W. Johnson

Institution: Auburn University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2047649702

FWCI: 25.22

Cites: 127

Cited by: 1,451

Related to: 10