The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
Year: 2014
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4866008
Institution: Seoul National University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2048040049