Year: 2011
Type: article
Abstract: The chemical trends of limits to doping of many semiconducting metal oxides is analyzed in terms of the formation energies needed to form the compensating defects. The $n$-type oxides are found to have high electron affinities and charge neutrality levels that lie in midgap or the upper part of their gap, whereas $p$-type oxides have small photoionization potentials and charge neutrality levels lying in the lower gap. The doping-limit energy range is found to vary with the bulk free energy of the compound.
Source: Physical Review B
Authors: J. Robertson, S. J. Clark
Institutions: University of Cambridge, Durham University
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2048339792