Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
Year: 2003
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1593218
Authors: Jay M. Shah, Y.-L. Li, Th. Gessmann, E. F. Schubert
Institution: Rensselaer Polytechnic Institute
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2048388556