The effect of the last quantum barrier on the internal quantum efficiency of InGaN-light emitting diode
Year: 2008
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2981640
Institutions: Kyung Hee University, Georgia Institute of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2048527652