Year: 2002
Type: article
Abstract: Deep submicron Al/AlOx/Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone and germanium, high quality niobium structures with good superconducting properties and a gap energy of up to 2ΔNb=2.5 meV were achieved. The I(U) characteristics of the transistors show special features due to tunneling of single Cooper pairs and significant gate modulation in both the superconducting and the normal state.
Source: Applied Physics Letters
DOI: 10.1063/1.1465526
Authors: R. Dolata, H. Scherer, A. B. Zorin, J. Niemeyer
Institution: Physikalisch-Technische Bundesanstalt
Language: English
Subfield: Astronomy and Astrophysics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2048839172