Work

Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)

Year: 2011

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/0022-3727/44/50/505101

Authors: O Moshe, D H Rich, B Damilano, J Massies

Institutions: Ben-Gurion University of the Negev, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2048842827

FWCI: 0.347

Cites: 47

Cited by: 5

Related to: 10