Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Year: 2014
Type: article
Abstract: Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2¯01)-oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.
Source: Optical Materials Express
DOI: 10.1364/ome.4.001067
Authors: Daoyou Guo, Zhenping Wu, Peigang Li, Yuehua An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li, Weihua Tang
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,843
OpenAlex ID: W2048866563