Work

The preparation of (Al2O3)x(SiO2)y thin films using [al(OSiEt3)3]2 as a single‐source precursor

Year: 1992

Type: article

Source: Advanced Materials for Optics and Electronics

DOI: 10.1002/amo.860010103

Authors: Christopher C. Landry, Linda K. Cheatham, Andrew N. Macinnes, Andrew R. Barron

Institution: Harvard University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2048940245

FWCI: 4.681

Cites: 33

Cited by: 17

Related to: 10