High-power InGaN/GaN double-heterostructure violet light emitting diodes
Year: 1993
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.109374
Authors: Shuji Nakamura, Masayuki Senoh, Takashi Mukai
Institution: Nichia Corporation (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2050080762