Work

Observation of Optical Cavity Modes in Photoluminescent Porous Silicon Films

Year: 1993

Type: article

Abstract: Uniform layers of porous Si have been produced that show fine structure in their photoluminescence (PL) spectra characteristic of longitudinal optical cavity modes. This mode spacing can be modified in a predictable way by immersing the porous Si layer in heptane, which changes the average refractive index of the porous Si layer. The 5 μm thick cavity is generated by a photoelectrochemical etch of single‐crystal (100) p‐Si wafers (3 mA/cm 2 , 9 C/cm 2 , irradiated with 57 μW/cm 2 of 500 nm light for the duration of the etch). Electron micrographs show that the layer is homogeneous on a submicron scale and that the Si/porous Si and porous Si/air transitions are abrupt (<0.5 μm). On thinner porous Si films, optical interference leads to a significant distortion of the emission spectrum. The relevance of interference‐induced spectral changes to measurements of the intrinsic emission spectrum of porous Si is discussed.

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.2221116

Authors: Corrine L. Curtis, Vincent V. Doan, Grace M. Credo, Michael J. Sailor

Institution: University of California San Diego

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: University of California, San Diego, Office of Naval Research

OpenAlex ID: W2050767593

FWCI:

Cites:

Cited by: 44

Related to: 10