Work

Filling of light emitting diode via-holes by MOCVD

Year: 1989

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/bf02657991

Authors: E. S. Johnson, G. E. Legg

Institution: Motorola (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2050788765

FWCI:

Cites: 13

Cited by:

Related to: 10