Year: 2006
Type: article
Abstract: We measure the small signal, 1GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1GHz. This work represents a significant step towards a full characterization of a nanotube transistor for rf and microwave amplifiers.
Source: Applied Physics Letters
DOI: 10.1063/1.2210447
Authors: Z. Yu, C. Rutherglen, P. J. Burke
Institution: University of California, Irvine
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2050845442