Work

Ultrahigh Photoresponse of Few‐Layer TiS 3 Nanoribbon Transistors

Year: 2014

Type: article

Abstract: TiS3 nanoribbons with thickness down to 15 nm are isolated by viscoelastic mechanical exfoliation. Field-effect transistors are fabricated and their electrical characteristics are studied in the dark state and upon illumination. An ultrahigh photoresponse up to 3000 A/W, a bandgap of 1 eV, and response times of about 4 ms are found making TiS3 a state-of-the-art material in photodetection.

Source: Advanced Optical Materials

DOI: 10.1002/adom.201400043

Authors: Joshua O. Island, Michele Buscema, Mariam Barawi, José M. Clamagirand, José R. Ares, Carlos Sánchez, Isabel J. Ferrer, Gary A. Steele, Herre S. J. van der Zant, Andres Castellanos‐Gomez

Institutions: Delft University of Technology, Universidad Autónoma de Madrid

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: European Commission, Ministerio de Economía y Competitividad

Awards: Strain engineering of atomically-thin nanomembrane-based electromechanical devices, G6196582043

OpenAlex ID: W2051519074

FWCI: 8.592

Cites: 41

Cited by: 203

Related to: 10