Work

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Year: 2008

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2008.4796677

Authors: H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, M.-J. Tsai

Institutions: National Tsing Hua University, Industrial Technology Research Institute, Minghsin University of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2051736202

FWCI: 33.17

Cites: 7

Cited by: 664

Related to: 10