The Nano-Memory Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor
Year: 2003
Type: article
Abstract: The rediscovery and the memory application of single walled carbon nanotubes (SWNTs) give a new method in nanoelectronics applications. At first we will report the memory effects of a SWNT, and attempt to use this property in a memory device. To use a SWNT field effect transistor (FET) as a charge-storage memory device, the device operates by injecting electrons from the nanotube channel of a TubeFET into charge traps on the surface of the SiO 2 gate dielectric, thus shifting the threshold voltage. This memory can be written and erased many times, and has a hold time of hundreds of seconds at room temperature. At second we have attempted to make a Peapod tubeFET. It is the structure that a C 60 was contained within the tube and separated from it by a graphitic Van der Waals gap. I – V property of the Peapod shows semiconducting property.
DOI: 10.1143/jjap.42.5392
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2051776365