Microstructure and Sintering Behavior of ZnO Thermoelectric Materials Prepared by the Pulse-Current-Sintering Method
Year: 2007
Type: article
Abstract: Thermoelectric elements using environment-friendly materials with high thermoelectric conversion efficiency and of these thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of TiO2, CoO, and Al2O3 to ZnO. It was found that the interstitial TiO2 in the ZnO restrains the grain growth and CoO acts onto the bond between grains.
Source: Materials science forum
Institutions: Saga University, Industrial Technology Center of SAGA
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2052078318