Work

Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors

Year: 2006

Type: article

Source: Physical Review B

DOI: 10.1103/physrevb.74.045202

Authors: Anderson Janotti, David Segev, Chris G. Van de Walle

Institution: University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Materials Research Science and Engineering Center, Harvard University, Office of Naval Research, Air Force Office of Scientific Research

OpenAlex ID: W2052084824

FWCI: 13.83

Cites: 50

Cited by: 354

Related to: 10