Year: 2006
Type: article
Abstract: In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as ${\ensuremath{\sigma}}_{xy}^{\mathrm{SJ}}/{\ensuremath{\sigma}}_{xy}^{\mathrm{SS}}\ensuremath{\sim}(\ensuremath{\hbar}/\ensuremath{\tau})/{\ensuremath{\epsilon}}_{F}$, with $\ensuremath{\tau}$ being the transport relaxation time. Motivated by recent experimental work we apply our theory to $n$- and $p$-doped 3D and 2D GaAs structures, obtaining ${\ensuremath{\sigma}}_{s}/{\ensuremath{\sigma}}_{c}\ensuremath{\sim}{10}^{\ensuremath{-}3}--{10}^{\ensuremath{-}4}$, where ${\ensuremath{\sigma}}_{s(c)}$ is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in $n$-doped 3D GaAs system.
Source: Physical Review Letters
Authors: Wang-Kong Tse, S. Das Sarma
Institution: University of Maryland, College Park
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2052274929