Work

Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

Year: 2008

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2008.4796812

Authors: R. Degraeve, M. Cho, B. Govoreanu, B. Kaczer, M.B. Zahid, J. Van Houdt, M. Jurczak, G. Groeseneken

Institutions: IMEC, KU Leuven

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052306257

FWCI: 10.43

Cites:

Cited by: 99

Related to: 10