Year: 2010
Type: article
Abstract: Using tunneling spectroscopy we have measured the spectral density of states of the mobile, two-dimensional electron system generated at the ${\text{LaAlO}}_{3}{\text{-SrTiO}}_{3}$ interface. As shown by the density of states the interface electron system differs qualitatively, first, from the electron systems of the materials defining the interface and, second, from the two-dimensional electron gases formed at interfaces between conventional semiconductors.
Source: Physical Review B
Language: Latvian
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2052431888
