Work

Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

Year: 1986

Type: article

Source: Surface Science

DOI: 10.1016/0039-6028(86)90849-6

Authors: P.S. Ho, M. Liehr, P.E. Schmid, F.K. Legoues, E.S. Yang, H.L. Evans, X. Wu

Institutions: IBM Research - Thomas J. Watson Research Center, IBM (United States), Columbia University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052707327

FWCI: 1.173

Cites: 13

Cited by: 11

Related to: 10