Work

Electric Field Scaling at a B=0 Metal-Insulator Transition in Two Dimensions

Year: 1996

Type: article

Abstract: The nonlinear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at $B\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0$. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, $\ensuremath{\nu}\ensuremath{\approx}1.5$, and the dynamical exponent, $z\ensuremath{\approx}0.8$, close to the theoretical value $z\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1$.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.77.4938

Authors: S. V. Kravchenko, D. Simonian, M. P. Sarachik, Whitney Mason, J. E. Furneaux

Institutions: City College of New York, University of Oklahoma

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: U.S. Department of Energy

Award: MAGNETIC PROPERTIES OF DOPED SEMICONDUCTORS