The Microstructure and Ferroelectric Properties of Ce-Doped Bi4Ti3O12Thin Films Fabricated by Liquid Delivery MOCVD
Year: 2007
Type: article
Abstract: Ferroelectric Ce-doped Bi₄Ti₃O₁₂ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a Pt(111)/Ti/SiO₂/Si(100) substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric films. After annealing above 640℃, the BCT films exhibited a polycrystalline structure with preferred (00l) and (117) orientations. The BCT film capacitor with a top Pt electrode showed a large remnant polarization (2P r ) of 44.56 μC/㎠ at an applied voltage of 5 V and exhibited fatigue-free behavior up to 1.0×10¹¹ switching cycles at a frequency of 1 ㎒. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.
Authors: Won-Tae Park, Dong-Kyun Kang, Byong-Ho Kim
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2053134460