Year: 2015
Type: article
Abstract: In numerous systems, giant physical responses have been discovered when two phases coexist; for example, near a phase transition. An intermetallic FeRh system undergoes a first-order antiferromagnetic to ferromagnetic transition above room temperature and shows two-phase coexistence near the transition. Here we have investigated the effect of an electric field to FeRh/PMN-PT heterostructures and report 8% change in the electrical resistivity of FeRh films. Such a ‘giant’ electroresistance (GER) response is striking in metallic systems, in which external electric fields are screened, and thus only weakly influence the carrier concentrations and mobilities. We show that our FeRh films comprise coexisting ferromagnetic and antiferromagnetic phases with different resistivities and the origin of the GER effect is the strain-mediated change in their relative proportions. The observed behaviour is reminiscent of colossal magnetoresistance in perovskite manganites and illustrates the role of mixed-phase coexistence in achieving large changes in physical properties with low-energy external perturbation. The control of magnetization by an electric field can offer new magnetic data devices. Here, controlling magnetic phases in FeRh, the authors achieve a large electroresistance response in FeRh/PMN-PT heterostructures by applying an electric field, which could be used for non-volatile memory applications.
Source: Nature Communications
DOI: 10.1038/ncomms6959
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Funders: National Science Foundation, U.S. Department of Defense, U.S. Department of Energy, Battelle, UT-Battelle, Defense Advanced Research Projects Agency, Cornell Center for Materials Research, Materials Research Science and Engineering Center, Harvard University, Multidisciplinary University Research Initiative, Division of Materials Research, Basic Energy Sciences, Laboratory Directed Research and Development, Army Research Office, Oak Ridge National Laboratory
Awards: G1286236842, G1286251239, G1445641779, G1690895400, G1816284028, G1977972760, G213222014, G2795275917, G3016594898, G30714459, G3083819904, G365575497, G42916606, G4656289215, G5206177008, NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems TANMS, Cornell Center for Materials Research - CEMRI, G5687849436, G5849692847, G650090426, G660579501, G7561642361, G969889393
OpenAlex ID: W2053159482
