Work

High temperature 1 Gbit/s data transmission usingλ = 835 nm GaAs VCSELs

Year: 1997

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19970363

Authors: P. Schnitzer, M. Grabherr, G. Reiner, B. Weigl, W. Zick, K.J. Ebeling

Institution: Universität Ulm

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2054843964

FWCI:

Cites: 3

Cited by: 1

Related to: 10