Work

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Year: 2013

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2013.2283517

Authors: Runsheng Wang, Xiaobo Jiang, Tao Yu, Jiewen Fan, Jiang Chen, David Z. Pan, Ru Huang

Institutions: Peking University, Stanford University, Massachusetts Institute of Technology, The University of Texas at Austin

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2054856749

FWCI: 2.196

Cites: 19

Cited by: 87

Related to: 10