Work

Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions

Year: 1998

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.589952

Authors: A. C. Churchill, D. J. Robbins, D. J. Wallis, N. Griffin, D. J. Paul, A. J. Pidduck, W. Y. Leong, G. M. Williams

Institution: University of Cambridge

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

OpenAlex ID: W2055009295

FWCI: 3.438

Cites: 17

Cited by: 29

Related to: 10