Work

Tracking defect-induced ferromagnetism in GaN:Gd

Year: 2011

Type: article

Abstract: We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10${}^{19}$ cm${}^{\ensuremath{-}3}$ might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.

Source: Physical Review B

DOI: 10.1103/physrevb.84.081201

Authors: Martin Roever, Joerg Malindretos, Amilcar Bedoya-Pinto, Angela Rizzi, Christian Rauch, Filip Tuomisto

Institutions: University of Göttingen, Aalto University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,675

Funder: Justus Liebig Universität Gießen