Mask 3D effects and compensation for high NA EUV lithography
Year: 2013
Type: conference-paper
DOI: 10.1117/12.2011643
Institutions: GlobalFoundries (United States), IBM (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2055095265
