Work

High Concentration Arsenic Diffusion in Silicon from a Doped Oxide Source

Year: 1972

Type: article

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.2404003

Author: Richard B. Fair

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2055884302

FWCI: 1.443

Cites:

Cited by: 19

Related to: 10