Year: 1997
Type: article
Abstract: The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Ω·cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.
Institution: University of Yamanashi
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2055988461